Multi baseband termination components for RF power amplifier with enhanced video bandwidth
US9979360B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF amplifier includes a transistor, a shunt circuit, an envelope frequency termination circuit, and an extra lead. The shunt circuit is coupled between a transistor current carrying terminal and a ground reference node. The shunt circuit has a shunt inductive element and a shunt capacitor coupled in series, with an RF cold point node between the shunt inductive element and the shunt capacitor. The envelope frequency termination circuit is coupled between the RF cold point node and the ground reference node. The envelope frequency termination circuit has an envelope resistor, an envelope inductive element, and an envelope capacitor coupled in series. The extra lead is electrically coupled to the RF cold point node. The extra lead provides a lead inductance in parallel with an envelope inductance provided by the envelope inductive element. An additional shunt capacitor can be coupled between the extra lead and ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.