Patent · US Active

Doped piezoelectric resonator

US9979378B2 · kind B2 · utility

0Cited by

13References

20Claims

0Family size

Assignee

Analog Devices, Inc. · US

Inventor

Florian Thalmayr · Unterhaching, DE

Key dates

Filing date	Nov 20, 2015
Grant date	May 22, 2018
Priority date	—
Expiry date	Nov 20, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N30/802
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Mechanical resonators including doped piezoelectric active layers are described. The piezoelectric active layer(s) of the mechanical resonator may be doped with a dopant type and concentration suitable to increase the electromechanical coupling coefficient of the active layer. The increase in electromechanical coupling coefficient may all for improved performance and smaller size mechanical resonators than feasible without using the doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.