Photoelectric conversion element and wavelength sensor
US9983062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 15, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/258
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.