Overheat detection circuit and semiconductor device
US9983067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2015 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.