Patent · US Active

Overheat detection circuit and semiconductor device

US9983068B2 · kind B2 · utility

0Cited by
24References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 15, 2015
Grant dateMay 29, 2018
Priority date
Expiry dateOct 12, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01K3/005
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Provided is an overheat detection circuit that is capable of quickly outputting an overheated state detection signal in an overheated state without outputting an unintended erroneous output caused by disturbance noise, such as momentary voltage fluctuations in the power supply. The overheat detection circuit includes: a temperature sensor; a comparison section; and a disturbance noise removal section configured to output an overheated state detection signal to an output section after a predetermined delay time has elapsed. The delay time is reduced in proportion to temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.