Systems and methods for determining parameters of a power MOSFET model
US9984190B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods are provided for determining parameters of a power MOSFET model. First data related to characteristics of a semiconductor device in a steady-state operation and second data related to transient-response characteristics of the device are received. Variables of one or more functions are fit to the first data to determine static parameters of a power MOSFET model. A computer simulation is executed to determine transient-response characteristics of the model as configured with a current set of dynamic parameters, where the simulation generates a set of values indicative of the model's transient-response characteristics. An error value indicating a difference between the set of values and the second data is determined. Based on a determination that the error value is greater than the threshold, values of the current set of dynamic parameters are adjusted based on the error value and results of computer simulations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.