Sputtered transparent conductive aluminum doped zinc oxide films
US9984786B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Oct 4, 2013 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.