Capacitor element and method of manufacturing the same
US9984823B2 · kind B2 · utility
0Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2015 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Aug 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a thin film type capacitor element, including: a body part formed by stacking a plurality of dielectric layers; a first internal electrode provided in the body part and including a first non-plated region; a second internal electrode including a second non-plated region; a first via formed in the first non-plated region; and a second via formed in the second non-plated region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.