Patent · US Active

Method for producing an optoelectronic semiconductor chip

US9985011B2 · kind B2 · utility

1Cited by

12References

20Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Britta Göötz · Regensburg, DE
Ion Stoll · Tegernheim, DE
Norwin von Malm · Nittendorf, DE

Key dates

Filing date	Aug 8, 2014
Grant date	May 29, 2018
Priority date	—
Expiry date	Aug 8, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0362
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.