Method of manufacturing a semiconductor device
US9985034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2015 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | May 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active region defined by a device isolation layer and at least a gate trench linearly extending in a first direction to cross the active region, the active region having a gate area at a bottom of the gate trench and a junction area at a surface of the substrate. The device further may include a first conductive line filling the gate trench and extending in the first direction, the first conductive line having a buried gate structure on the gate area of the active region. The device also may include a junction including implanted dopants at the junction area of the active region, and a junction separator on the device isolation layer and defining the junction. The junction separator may be formed of an insulative material and have an etch resistance greater than that of the device isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.