Semiconductor device with low lifetime region
US9985090B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2013 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
In a semiconductor device including a low lifetime region of a depth within a range on both sides sandwiching a p-n junction of a p-type semiconductor region bottom portion, the low lifetime region includes a central region that has a portion coinciding with the semiconductor region as seen from one main surface side and is selectively formed as far as the position of a contact end portion of a region of the coinciding portion with which the semiconductor region and a metal electrode are in contact, a peripheral region wherein the central region extends as far as the position of an outer peripheral end of the semiconductor region, and an expanded end portion region wherein the peripheral region extends as far as an outer peripheral end of the innermost of guard rings. Because of this, it is possible to reduce leakage current while maintaining high reverse recovery current resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.