Super junction with an angled trench, transistor having the super junction and method of making the same
US9985094B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Dec 27, 2013 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.