Method for processing polysilicon thin film and method for fabricating thin film transistor
US9985116B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Nov 14, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a polysilicon thin film and a method for fabricating a thin film transistor are provided. The method for processing a polysilicon thin film includes: etching the polysilicon thin film using etching particles. An angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and less than 90°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.