Lattice matchable alloy for solar cells
US9985152B2 · kind B2 · utility
0Cited by
92References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≤x≤0.18, 0.025≤y≤0.04 and 0.001≤z≤0.03.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.