Passivated contact formation using ion implantation
US9985159B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 11, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.