Light emitting diode chip
US9985180B2 · kind B2 · utility
1Cited by
30References
24Claims
0Family size
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Key dates
| Filing date | Aug 8, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Aug 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1+A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.