White light emitting diode with single crystal phosphor and the manner of production
US9985185B2 · kind B2 · utility
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8References
5Claims
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Assignee
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Key dates
| Filing date | Apr 22, 2014 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 13, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to the invention, the diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AlGaN group comprises the fact that the single crystal phosphor (21) is created from the monocrystalline ingot (51), created by LuYAG or YAP hosts, doped with the atoms selected from the Ce3+, Ti3+, Eu2+, C, Gd3+ or Ga3+ group, grown from the melt with the method selected from the Czochralski, HEM, Badgasarov, Kyropoulos or EFG group, when the Lu3+, Y3+ and Al3+ atoms can be replaced in the host up to the amount of 99.9% with the B3+, Gd3+ or Ga3+ atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.