Patent · US Active

CMOS-compatible germanium tunable laser

US9985416B2 · kind B2 · utility

0Cited by

10References

9Claims

0Family size

Assignee

IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK · DE

Inventors

Giovanni Capellini · Roma, IT
Christian Wenger · Berlin, DE
Thomas Schroder · Berlin, DE
Grzegorz Kozlowski · Cottbus - Chóśebuz, DE

Key dates

Filing date	Feb 11, 2013
Grant date	May 29, 2018
Priority date	—
Expiry date	Feb 11, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/826
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.