High gain RF power amplifier with negative capacitor
US9985592B2 · kind B2 · utility
10Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | May 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45526
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.