Thin-film-forming material including a molybdenum imide compound
US9988411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.