Word line voltage generator for multiple-time programmable memory
US9990963B2 · kind B2 · utility
0Cited by
4References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 29, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Mar 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A word line voltage generator circuit, a semiconductor device, and an electronic device are provided. The word line voltage generator circuit includes a switch circuit connected to a high-level signal and a low-level signal and configured to output the high-level signal or the low-level signal as a word line voltage signal based on an input signal, and a drive signal control circuit configured to provide a drive signal connected to the switch circuit in response to the input signal. A voltage rising speed of the word line voltage signal is controlled by the drive signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.