Static random access memory device having uniform write characteristics
US9990986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static random access memory device includes a plurality of memory cells arranged in rows and columns, a write driver configured to apply a bit line voltage corresponding to write data to a bit line extending in a column direction of the plurality of memory cells in a write operation, and a sub power line configured to transmit a cell driving voltage to the plurality of memory cells in the write operation and to extend in a direction parallel to the bit line, and includes a first node and a second node. The cell driving voltage is applied to the first node of the sub power line and the first node of the sub power line is aligned with an output node of the write driver in a row direction of the plurality of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.