Semiconductor device including an electrically floated dummy contact plug and a method of manufacturing the same
US9991126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.