High voltage device with multi-electrode control
US9991225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jul 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LVT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.