Semiconductor device having fin active regions and method of fabricating the same

US9991257B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Miseon Park · Seoul, KR
• Jongryeol Yoo · Osan-si, KR
• Hyunjung Lee · Seoul, KR
• Yong-Suk Tak · Seoul, KR
• Bonyoung Koo · Seoul, KR
• Sunjung Kim · Suwon-si, KR

Key dates

• Filing date: Feb 2, 2016
• Grant date: Jun 5, 2018
• Expiry date: Feb 5, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device may include fin active regions extending parallel to each other on a substrate, an isolation region between the fin active regions, gate patterns intersecting the fin active regions and extending parallel to each other, source/drain areas on the fin active regions between the gate patterns and fin active region spacers contacting side surfaces of the fin active regions and formed over a surface of the isolation region between the fin active regions. Uppermost levels of the fin active region spacers may be higher than interfaces between the fin active regions and the source/drain areas. The upper surface of the isolation region may be lower than bottom surfaces of the source/drain areas.