Image sensors
US9991299B2 · kind B2 · utility
4Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Oct 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.