Image pickup device having an infrared absorption layer between a laminate band-pass layer and a low refractive index layer above on-chip lenses
US9991304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An image pickup device according to the present technique includes an on-chip lens, a low-refractive-index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive-index material. The low-refractive-index layer is formed flat on the on-chip lens and formed of a low-refractive-index material. The infrared absorption layer is formed of an infrared absorption material and laminated as a higher layer than the low-refractive-index layer. The infrared absorption material includes an infrared absorption pigment and a binder resin, the binder resin, being a synthetic resin constituted of a siloxane skeleton alone or a synthetic resin constituted of a siloxane skeleton part and a partial skeleton having a low reaction activity in an oxygen part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.