Patent · US Active

Dual active layer semiconductor device and method of manufacturing the same

US9991311B2 · kind B2 · utility

2Cited by

66References

12Claims

0Family size

Assignee

ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventors

Joseph T. Smith · Chandler, US
Michael Marrs · Phoenix, US

Key dates

Filing date	Mar 9, 2015
Grant date	Jun 5, 2018
Priority date	—
Expiry date	Mar 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/10128
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.