Semiconductor devices with gate electrodes on separate sets of high-k dielectric layers
US9991357B2 · kind B2 · utility
3Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Jun 20, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.