Semiconductor device including two-dimensional material
US9991371B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 12, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Oct 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/205
Abstract
A semiconductor device includes a substrate, a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer, the second region of the 2D material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.