Semiconductor device and method for manufacturing the same
US9991374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | May 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.