Thin film transition metal dichalcogenides and methods

US9991390B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Aaron George · Los Angeles, US
• Robert C. Ionescu · San Jose, US
• Hamed Hosseini Bay · San Diego, US
• Mihrimah Ozkan · San Diego, US
• Cengiz S. Ozkan · San Diego, US

Key dates

• Filing date: Sep 30, 2015
• Grant date: Jun 5, 2018
• Expiry date: Sep 30, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/46
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.