Thin film transistor (TFT) array substrate and fabrication method thereof, and display device
US9991398B2 · kind B2 · utility
1Cited by
1References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a thin film transistor array substrate and a fabrication method thereof, and a display device. The thin film transistor array substrate includes an active layer. The active layer is formed using a zinc target under an environment of oxygen and nitrogen in a sputtering chamber. A source/drain buffer layer is formed on the active layer using the zinc target by a sputtering process in the sputtering chamber under an environment containing one of oxygen and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.