Patent · US Active

Light emitting device and light emitting device package

US9991430B2 · kind B2 · utility

0Cited by
0References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2016
Grant dateJun 5, 2018
Priority date
Expiry dateJun 13, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/841

Abstract

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.