Method for producing semiconductor laser element
US9991671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a semiconductor laser element includes providing a semiconductor wafer comprising: a nitride semiconductor substrate, and a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers; forming in the substrate a fissure starting point and a fissure extending from the fissure starting point; forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; and cleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.