Index-coupled distributed-feedback semiconductor quantum cascade lasers fabricated without epitaxial regrowth
US9991677B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | May 13, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Quantum cascade (QC) lasers and methods of fabricating such QC lasers are provided. The QC lasers incorporate a DFB grating without requiring the use of relying on epitaxial regrowth processes. The DFB gratings are formed as sidewall gratings along the lateral length of the QC active region, or the DFB gratings are formed atop the lateral length of the QC active region, and wherein the top DFB grating is planarized with a polymeric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.