Surface acoustic wave (SAW) resonator
US9991870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | May 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6483
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.