Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor

US9992437B1 · kind B1 · utility

Assignee

• SMARTSENS TECHNOLOGY (U.S.), INC. · CN

Inventors

• Ko Ping Keung · Ma On Shan, CN
• Zhibin Xiong · Santa Clara, US
• Chen Xu · New Providence, US
• Zexu Shao · Shanghai, CN

Key dates

• Filing date: Feb 3, 2017
• Grant date: Jun 5, 2018
• Expiry date: Feb 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/812

Abstract

A pixel cell has a photodiode, a readout circuit, and a vertical transfer transistor. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry.