Chemical sensor with sidewall spacer sensor surface
US9995708B2 · kind B2 · utility
6Cited by
365References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2014 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Nov 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.