Method for producing semiconductor piece, circuit board and electronic device including semiconductor piece, and method for designing etching condition
US9997363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Apr 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor piece includes forming a first groove portion of a front-surface-side groove by anisotropic dry etching from a front surface of a substrate, forming a second groove portion of the front-surface-side groove, the second groove portion being located below and in communication with the first groove portion and having a width wider than a width of the first groove portion, and thinning the substrate from a back surface of the substrate up to the second groove portion. The second groove portion is formed by changing an etching condition of the anisotropic dry etching during the formation of the front-surface-side groove so that the width of the second groove portion is wider than the width of the first groove portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.