Power semiconductor module for improved thermal performance
US9997437B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 28, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Jul 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/40225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor module has a first member, a second member, a conductor column extending in the vertical direction between the first member and the second member and a sealing resin covering a first conductor layer and a first power device of the first member, a second conductor layer and a second power device of the second member and the conductor column. Positions of the first power device and the second power device on the horizontal plane are shifted, the second conductor layer is not provided in the vertical direction from a first connection part connected to the first power device, and the first conductor layer is not provided in the vertical direction from a second connection part, connected to the second power device, of the second power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.