Cobalt based interconnects and methods of fabrication thereof
US9997457B2 · kind B2 · utility
9Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Dec 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.