Integrated photo detector, method of making the same
US9997508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.