Semiconductor memory device and manufacturing method thereof

US9997524B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Ling Shih · Tainan, TW
• Chieh-Fei Chiu · Tainan, TW
• Po-Wei Liu · Taichung, TW
• Tsun-Kai Tsao · Tainan, TW
• Wen-Tuo Huang · Tainan, TW
• Yu-Ling Hsu · Tainan, TW
• Yong-Shiuan Tsair · Tainan, TW

Key dates

• Filing date: Sep 21, 2016
• Grant date: Jun 12, 2018
• Expiry date: Sep 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A memory device includes a substrate. An insulation layer is disposed in a recess in the substrate. A first gate structure is disposed over the substrate and the insulation layer. A first etch stop layer is disposed over the first gate structure. A first oxide layer is disposed over the first etch stop layer. A second etch stop layer is disposed over the first oxide layer. A first contact material is surrounded by and in contact with the first gate structure, first etch stop layer, second etch stop layer, and first oxide layer.