Photodetector on silicon-on-insulator
US9997550B2 · kind B2 · utility
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3References
22Claims
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Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Feb 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/24
Abstract
A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.