Spad array with pixel-level bias control
US9997551B2 · kind B2 · utility
33Cited by
14References
18Claims
0Family size
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Key dates
| Filing date | Dec 20, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device includes an array of sensing elements. Each sensing element includes a photodiode, including a p-n junction, and a local biasing circuit, coupled to reverse-bias the p-n junction at a bias voltage greater than a breakdown voltage of the p-n junction by a margin sufficient so that a single photon incident on the p-n junction triggers an avalanche pulse output from the sensing element. A bias control circuit is coupled to set the bias voltage in different ones of the sensing elements to different, respective values that are greater than the breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.