Organic light-emitting diode display having high aperture ratio and method for manufacturing the same
US9997581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Nov 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/38
Abstract
An organic light-emitting diode display includes a substrate in which an emission area and a non-emission area are defined; a thin film transistor disposed in the non-emission area on the substrate; passivation layer disposed on the thin film transistor; a first storage capacitor electrode and a second storage capacitor electrode superposed thereon, having the passivation layer interposed therebetween, in the emission area; an overcoat layer disposed on the second storage capacitor electrode; and an anode disposed on the overcoat layer, coming into contact with one side of the second storage capacitor electrode through an overcoat layer contact hole penetrating the overcoat layer and, coming into contact with part of the thin film transistor through a passivation layer contact hole disposed in the overcoat layer contact hole and penetrating the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.