Multiple quantum well structure and light emitting diodes

US9997665B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Zhibin Liu · Lo Wu, CN
• Shasha Chen · Tianjin, CN
• Dongyan Zhang · Tianjin, CN
• Xiaofeng Liu · Dallas, US
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Jun 7, 2016
• Grant date: Jun 12, 2018
• Expiry date: Aug 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.