Semiconductor light emitting device package
US9997670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2017 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Jan 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8506
Abstract
A semiconductor light emitting device package includes a light emitting structure having a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first surface, and a second surface, a first electrode and a second electrode disposed on the second surface of the light emitting structure; an insulating layer, a first metal pad and a second metal pad disposed on the insulating layer, and each having a surface with a first fine uneven pattern so as to have a first surface roughness, a first bonding pad and a second bonding pad disposed on the first metal pad and the second metal pad, respectively, and each having a surface with a second fine uneven pattern so as to have a second surface roughness, and an encapsulant encapsulating the first bonding pad, the second bonding pad, the first metal pad, and the second metal pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.