Resistive memory device having field enhanced features

US9997703B2 · kind B2 · utility

Assignee

• Hewlett Packard Enterprise Development LP · US

Inventors

• Si-Ty Lam · Pleasanton, US
• Xia Sheng · Palo Alto, US
• Richard H. Henze · Redwood City, US
• Zhang-Lin Zhou · Palo Alto, US

Key dates

• Filing date: Jul 25, 2013
• Grant date: Jun 12, 2018
• Expiry date: Jul 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.